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Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T22:23:07Z
dc.date.available2021-10-18T22:23:07Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18092
dc.sourceIIOimport
dc.titleTemperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewyes
dc.source.beginpageO243
dc.source.conference16th Workshop on Dielectrics in Microelectronics - WoDiM
dc.source.conferencedate28/06/2010
dc.source.conferencelocationBratislava Slovak
imec.availabilityPublished - imec


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