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Depth localization of trapped holes in SiON pMOSFETs after positive and negative gate stress

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorDegraeve, Robin
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T22:24:05Z
dc.date.available2021-10-18T22:24:05Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18094
dc.sourceIIOimport
dc.titleDepth localization of trapped holes in SiON pMOSFETs after positive and negative gate stress
dc.typeMeeting abstract
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.source.peerreviewyes
dc.source.beginpageP44
dc.source.conference41st IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate2/12/2010
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - imec


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