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Study of the etching mechanism of heavily doped Si in HF

dc.contributor.authorValckx, Nick
dc.contributor.authorCuypers, Daniel
dc.contributor.authorVos, Rita
dc.contributor.authorPhilipsen, Harold
dc.contributor.authorRip, Jens
dc.contributor.authorDoumen, Geert
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T22:42:08Z
dc.date.available2021-10-18T22:42:08Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18133
dc.sourceIIOimport
dc.titleStudy of the etching mechanism of heavily doped Si in HF
dc.typeMeeting abstract
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorPhilipsen, Harold
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorDoumen, Geert
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecPhilipsen, Harold::0000-0002-5029-1104
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage158
dc.source.endpage159
dc.source.conference10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS
dc.source.conferencedate20/09/2010
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - open access
imec.internalnotesP2.1


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