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Boosting the on-current of Si-based tunnel field-effect transistors

dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandenberghe, William
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T23:48:54Z
dc.date.available2021-10-18T23:48:54Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18276
dc.sourceIIOimport
dc.titleBoosting the on-current of Si-based tunnel field-effect transistors
dc.typeProceedings paper
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage363
dc.source.endpage372
dc.source.conferenceSiGe, Ge, and Related Compounds 4: Materials, Processing and Devices
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 33, Iss. 6


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