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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrammertz, Guy
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T00:01:56Z
dc.date.available2021-10-19T00:01:56Z
dc.date.issued2010
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18302
dc.sourceIIOimport
dc.titleLow temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2671
dc.source.endpage2676
dc.source.journalJournal of Crystal Growth
dc.source.issue19
dc.source.volume312
imec.availabilityPublished - open access


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