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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane
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Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vincent, Benjamin
;
Loo, Roger
;
Vandervorst, Wilfried
;
Brammertz, Guy
;
Caymax, Matty
Journal
Journal of Crystal Growth
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Acq. date: 2025-12-16
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Views
1836
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-16
Citations