Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

dc.contributor.author	Vincent, Benjamin
dc.contributor.author	Loo, Roger
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.author	Brammertz, Guy
dc.contributor.author	Caymax, Matty
dc.contributor.imecauthor	Vincent, Benjamin
dc.contributor.imecauthor	Loo, Roger
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.imecauthor	Brammertz, Guy
dc.contributor.imecauthor	Caymax, Matty
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.contributor.orcidimec	Brammertz, Guy::0000-0003-1404-7339
dc.date.accessioned	2021-10-19T00:01:56Z
dc.date.available	2021-10-19T00:01:56Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0022-0248
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/18302
dc.source.beginpage	2671
dc.source.endpage	2676
dc.source.issue	19
dc.source.journal	Journal of Crystal Growth
dc.source.volume	312
dc.title	Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane
dc.type	Journal article
dspace.entity.type	Publication
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