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Si passivation for Ge pMOSFETs: influence of Si precursor during RPCVD growth

dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorValev, V.
dc.contributor.authorVerbiest, T.
dc.contributor.authorTakeuchi, S.
dc.contributor.authorZaima, S.
dc.contributor.authorRip, Jens
dc.contributor.authorBrijs, Bert
dc.contributor.authorConard, Thierry
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T00:02:32Z
dc.date.available2021-10-19T00:02:32Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18303
dc.sourceIIOimport
dc.titleSi passivation for Ge pMOSFETs: influence of Si precursor during RPCVD growth
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.conference5th International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate24/05/2010
dc.source.conferencelocationStockholm Sweden
imec.availabilityPublished - imec


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