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Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy

dc.contributor.authorWagner, Paul-Jurgen
dc.contributor.authorGrasser, Tibor
dc.contributor.authorReisinger, Hans
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-19T00:11:52Z
dc.date.available2021-10-19T00:11:52Z
dc.date.issued2010-07
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18322
dc.sourceIIOimport
dc.titleOxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA
dc.source.conferencedate5/07/2010
dc.source.conferencelocationSingapore
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5532233
imec.availabilityPublished - open access


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