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Hiqh quality Ge epitaxial layers in narrow channels on Si (001) substrates

dc.contributor.authorWang, Gang
dc.contributor.authorRosseel, Erik
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T00:17:31Z
dc.date.available2021-10-19T00:17:31Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18333
dc.sourceIIOimport
dc.titleHiqh quality Ge epitaxial layers in narrow channels on Si (001) substrates
dc.typeMeeting abstract
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials
dc.source.conferencedate7/06/2010
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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