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Effect of anodic interface layers on the unipolar switching of HfO2-based resistive RAM

dc.contributor.authorWang, Xin Peng
dc.contributor.authorChen, Yangyin
dc.contributor.authorPantisano, Luigi
dc.contributor.authorGoux, Ludovic
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-19T00:20:38Z
dc.date.available2021-10-19T00:20:38Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18339
dc.sourceIIOimport
dc.titleEffect of anodic interface layers on the unipolar switching of HfO2-based resistive RAM
dc.typeProceedings paper
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage140
dc.source.endpage141
dc.source.conferenceInternational Symposium on VLSI Technology Systems and Applications - VLSI-TSA
dc.source.conferencedate26/04/2010
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - open access


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