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Electron trap profiling near Al2O3/ gate interface in TANOS stack using gate-side-trap spectroscopy by charge injection and sensing

dc.contributor.authorZahid, Mohammed
dc.contributor.authorArreghini, Antonio
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorSuhane, Amit
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-19T00:52:06Z
dc.date.available2021-10-19T00:52:06Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18402
dc.sourceIIOimport
dc.titleElectron trap profiling near Al2O3/ gate interface in TANOS stack using gate-side-trap spectroscopy by charge injection and sensing
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage1158
dc.source.endpage1160
dc.source.journalIEEE Electron Device Letters
dc.source.issue10
dc.source.volume31
imec.availabilityPublished - imec


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