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EUV modeling accruracy and integration requirements for the 16nm node

dc.contributor.authorZavyalova, Lena
dc.contributor.authorSu, Irene
dc.contributor.authorJang, Stephen
dc.contributor.authorCobb, Jonathan
dc.contributor.authorWard, Brian
dc.contributor.authorSorensen, Jacob
dc.contributor.authorSong, Hua
dc.contributor.authorGao, Weimin
dc.contributor.authorLucas, Kevin
dc.contributor.authorLorusso, Gian
dc.contributor.authorHendrickx, Eric
dc.date.accessioned2021-10-19T00:53:39Z
dc.date.available2021-10-19T00:53:39Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18405
dc.sourceIIOimport
dc.titleEUV modeling accruracy and integration requirements for the 16nm node
dc.typeProceedings paper
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorHendrickx, Eric
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage763627
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography
dc.source.conferencedate21/02/2010
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 7636


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