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Total-dose-irradiation and annealing responses of Ge-pMOSFETs

dc.contributor.authorZhang, C.X.
dc.contributor.authorZhang, E.X.
dc.contributor.authorFleetwood, Dan
dc.contributor.authorSchrimpf, Ron
dc.contributor.authorGalloway, Ken
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T00:54:40Z
dc.date.available2021-10-19T00:54:40Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18407
dc.sourceIIOimport
dc.titleTotal-dose-irradiation and annealing responses of Ge-pMOSFETs
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewno
dc.source.conferenceIEEE Nuclear and Space Radiation Effects Conference - NSREC
dc.source.conferencedate19/07/2010
dc.source.conferencelocationDenver, CO USA
imec.availabilityPublished - imec


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