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Effects of processing and radiation bias on leakage currents in Ge pMOSFETs

dc.contributor.authorZhang, Cher Xuan
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorGalloway, Kenneth F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T00:56:15Z
dc.date.available2021-10-19T00:56:15Z
dc.date.issued2010
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18410
dc.sourceIIOimport
dc.titleEffects of processing and radiation bias on leakage currents in Ge pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3066
dc.source.endpage3070
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue6
dc.source.volume57
imec.availabilityPublished - open access


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