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Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators

dc.contributor.authorZhang, Yan
dc.contributor.authorFischetti, Massimo
dc.contributor.authorSoree, Bart
dc.contributor.authorO'Regan, Terrance
dc.date.accessioned2021-10-19T01:01:17Z
dc.date.available2021-10-19T01:01:17Z
dc.date.issued2010
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18420
dc.sourceIIOimport
dc.titleTheory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
dc.typeJournal article
dc.contributor.imecauthorSoree, Bart
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage123713
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume108
imec.availabilityPublished - open access


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