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Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
Publication:
Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
Date
2010
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhang, Yan
;
Fischetti, Massimo
;
Soree, Bart
;
O'Regan, Terrance
Journal
Journal of Applied Physics
Abstract
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1901
since deposited on 2021-10-19
407
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1901
since deposited on 2021-10-19
407
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations