Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators

dc.contributor.author	Zhang, Yan
dc.contributor.author	Fischetti, Massimo
dc.contributor.author	Soree, Bart
dc.contributor.author	O'Regan, Terrance
dc.contributor.imecauthor	Soree, Bart
dc.contributor.orcidimec	Soree, Bart::0000-0002-4157-1956
dc.date.accessioned	2021-10-19T01:01:17Z
dc.date.available	2021-10-19T01:01:17Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0021-8979
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/18420
dc.source.beginpage	123713
dc.source.issue	12
dc.source.journal	Journal of Applied Physics
dc.source.volume	108
dc.title	Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
dc.type	Journal article
dspace.entity.type	Publication
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