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Electron spin resonance study of defects in low-k oxide insulators (k = 2.5–2.0)

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorKeunen, K.
dc.contributor.authorStesmans, Andre
dc.contributor.authorJivanescu, M.
dc.contributor.authorTokei, Zsolt
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorBeyer, Gerald
dc.date.accessioned2021-10-19T12:28:29Z
dc.date.available2021-10-19T12:28:29Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18454
dc.sourceIIOimport
dc.titleElectron spin resonance study of defects in low-k oxide insulators (k = 2.5–2.0)
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.orcidimecAfanasiev, Valeri::0000-0001-5018-4539
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1503
dc.source.endpage1506
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - imec
imec.internalnotesINFOS 2011 paper


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