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Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs

dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorMartino, J.A.
dc.contributor.authorKoboyashi, D.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T12:28:34Z
dc.date.available2021-10-19T12:28:34Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18458
dc.sourceIIOimport
dc.titleImpact of proton irradiation on strained triple gate SOI p- and n-MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage7
dc.source.endpage10
dc.source.conferenceEuropean Conference on Radiation Effects on Component and Systems - RADECS
dc.source.conferencedate19/09/2011
dc.source.conferencelocationSevilla Spain
imec.availabilityPublished - imec


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