Show simple item record

Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell

dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorDemand, Marc
dc.contributor.authorBoullart, Werner
dc.date.accessioned2021-10-19T12:28:53Z
dc.date.available2021-10-19T12:28:53Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18470
dc.sourceIIOimport
dc.titleDry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell
dc.typeJournal article
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewyes
dc.source.beginpage271
dc.source.endpage278
dc.source.journalMicroelectronic Engineering
dc.source.issue9
dc.source.volume88
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record