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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell
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2007 since deposited on 2021-10-19
1last month
Acq. date: 2025-12-16
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Metrics
Views
2007 since deposited on 2021-10-19
1last month
Acq. date: 2025-12-16
Citations