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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell
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Authors
Altamirano Sanchez, Efrain
;
Paraschiv, Vasile
;
Demand, Marc
;
Boullart, Werner
ISSN
0167-9317
Issue
9
Journal
Microelectronic Engineering
Volume
88
Title
Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell
Publication type
Journal article
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