Publication:
Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell
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2016 since deposited on 2021-10-19
4last month
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Acq. date: 2026-08-10
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Statistics
Views
2016 since deposited on 2021-10-19
4last month
2last week
Acq. date: 2026-08-10
Citations