Publication:
Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell
Date
| dc.contributor.author | Altamirano Sanchez, Efrain | |
| dc.contributor.author | Paraschiv, Vasile | |
| dc.contributor.author | Demand, Marc | |
| dc.contributor.author | Boullart, Werner | |
| dc.contributor.imecauthor | Altamirano Sanchez, Efrain | |
| dc.contributor.imecauthor | Paraschiv, Vasile | |
| dc.contributor.imecauthor | Demand, Marc | |
| dc.contributor.imecauthor | Boullart, Werner | |
| dc.contributor.orcidimec | Boullart, Werner::0000-0001-7614-2097 | |
| dc.date.accessioned | 2021-10-19T12:28:53Z | |
| dc.date.available | 2021-10-19T12:28:53Z | |
| dc.date.issued | 2011 | |
| dc.identifier.issn | 0167-9317 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/18470 | |
| dc.source.beginpage | 271 | |
| dc.source.endpage | 278 | |
| dc.source.issue | 9 | |
| dc.source.journal | Microelectronic Engineering | |
| dc.source.volume | 88 | |
| dc.title | Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm 3 node on a 6T-SRAM cell | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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