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Gate voltage influence on the channel hot-carrier degradation of high-k-based devices

dc.contributor.authorAmat, Esteve
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRodríguez, Rosana
dc.contributor.authorNafria, Montse
dc.contributor.authorAymerich, Xavier
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T12:29:07Z
dc.date.available2021-10-19T12:29:07Z
dc.date.issued2011
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18477
dc.sourceIIOimport
dc.titleGate voltage influence on the channel hot-carrier degradation of high-k-based devices
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage92
dc.source.endpage96
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue1
dc.source.volume11
imec.availabilityPublished - open access


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