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InP-based LED emitting at 1.55μm with 6.8% external QE

dc.contributor.authorDepreter, Bart
dc.contributor.authorBlondelle, Johan
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorBaets, Roel
dc.contributor.authorVan Daele, P.
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-09-30T08:12:21Z
dc.date.available2021-09-30T08:12:21Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1856
dc.sourceIIOimport
dc.titleInP-based LED emitting at 1.55μm with 6.8% external QE
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorBaets, Roel
dc.contributor.imecauthorDemeester, Piet
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.contributor.orcidimecDemeester, Piet::0000-0003-2810-3899
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage101
dc.source.endpage104
dc.source.conferenceProceedings 1997 of the IEEE/LEOS Symposium Benelux Chapter
dc.source.conferencedate26/11/1997
dc.source.conferencelocationEindhoven The Netherlands
imec.availabilityPublished - imec


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