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Characterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures

dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-09-30T08:13:10Z
dc.date.available2021-09-30T08:13:10Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1861
dc.sourceIIOimport
dc.titleCharacterisation of 2% mismatched InGaAs and InAsP layers, grown on different buffer layers and at different growth temperatures
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage616
dc.source.endpage620
dc.source.journalJournal of Crystal Growth
dc.source.issue1_4
dc.source.volume170
imec.availabilityPublished - open access
imec.internalnotes8th International Conference on Metalorganic Vapour Phase Epitaxy. 9-13 June 1996; Cardiff, UK


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