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A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon

dc.contributor.authorChen, J.
dc.contributor.authorCornagliotti, Emanuele
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHieckmann, E.
dc.contributor.authorWeber, J.
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-19T12:44:16Z
dc.date.available2021-10-19T12:44:16Z
dc.date.issued2011
dc.identifier.issn1862-6254
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18657
dc.sourceIIOimport
dc.titleA deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon
dc.typeJournal article
dc.contributor.imecauthorCornagliotti, Emanuele
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage277
dc.source.endpage279
dc.source.journalPhysica Status Solidi. Rapid Research Letters
dc.source.issue8
dc.source.volume5
imec.availabilityPublished - open access


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