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HBM ESD robustness of GaN-on-Si Schottky diodes for power applications

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorScholz, Mirko
dc.contributor.authorMarcon, Denis
dc.contributor.authorVashchenko, Vladislav
dc.contributor.authorGallerano, Antonio
dc.contributor.authorLafonteese, David
dc.contributor.authorHopper, Peter
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T12:45:00Z
dc.date.available2021-10-19T12:45:00Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18662
dc.sourceIIOimport
dc.titleHBM ESD robustness of GaN-on-Si Schottky diodes for power applications
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conferenceEOS/ESD Symposium
dc.source.conferencedate11/09/2011
dc.source.conferencelocationAnaheim, CA USA
imec.availabilityPublished - imec


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