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HBM ESD robustness of GaN-on-Si Schottky diodes

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorScholz, Mirko
dc.contributor.authorMarcon, Denis
dc.contributor.authorGallerano, Antonio
dc.contributor.authorLafonteese, David
dc.contributor.authorConcannon, Ann
dc.contributor.authorVashchenko, Vlad
dc.contributor.authorHopper, Peter
dc.contributor.authorBychikhin, Sergei
dc.contributor.authorPogany, Dionyz
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T12:45:13Z
dc.date.available2021-10-19T12:45:13Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18663
dc.sourceIIOimport
dc.titleHBM ESD robustness of GaN-on-Si Schottky diodes
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.conference21st RCJ Reliability Symposium
dc.source.conferencedate1/11/2011
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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