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Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorThijs, Steven
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorLinten, Dimitri
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T12:45:21Z
dc.date.available2021-10-19T12:45:21Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18664
dc.sourceIIOimport
dc.titleUnexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage131
dc.source.endpage134
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington DC USA
imec.availabilityPublished - open access


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