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Switching by Ni filaments in a HfO2 matrix: a new pathway to improved unipolar switching RRAM

dc.contributor.authorChen, Yangyin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorWang, Xin Peng
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorGoux, Ludovic
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorPantisano, Luigi
dc.contributor.authorKubicek, Stefan
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.contributor.authorKittl, Jorge
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-19T12:45:51Z
dc.date.available2021-10-19T12:45:51Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18667
dc.sourceIIOimport
dc.titleSwitching by Ni filaments in a HfO2 matrix: a new pathway to improved unipolar switching RRAM
dc.typeProceedings paper
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage115
dc.source.endpage117
dc.source.conference3rd IEEE International Memory Workshop - IMW
dc.source.conferencedate22/05/2011
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - open access


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