Influence of growth temperature on buffer leakage current of AlGaN/GaN/AlGaN DH-FET grown on silicon substrates
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Srivastava, Puneet | |
dc.contributor.author | Sijmus, Bram | |
dc.contributor.author | Dekoster, Johan | |
dc.date.accessioned | 2021-10-19T12:46:39Z | |
dc.date.available | 2021-10-19T12:46:39Z | |
dc.date.issued | 2011 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/18673 | |
dc.source | IIOimport | |
dc.title | Influence of growth temperature on buffer leakage current of AlGaN/GaN/AlGaN DH-FET grown on silicon substrates | |
dc.type | Oral presentation | |
dc.contributor.imecauthor | Dekoster, Johan | |
dc.source.peerreview | no | |
dc.source.conference | 9th International Conference on Nitride Semiconductors - ICNS-9 | |
dc.source.conferencedate | 10/07/2011 | |
dc.source.conferencelocation | Glasgow UK | |
imec.availability | Published - imec |
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