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Thick high quality GaN layers grown on 200mm Si(111) substrates by MOVPE

dc.contributor.authorCheng, Kai
dc.contributor.authorWestwater, Simon
dc.contributor.authorLeys, Maarten
dc.contributor.authorDekoster, Johan
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorJun, S.W.
dc.contributor.authorBour, D.P.
dc.date.accessioned2021-10-19T12:46:47Z
dc.date.available2021-10-19T12:46:47Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18674
dc.sourceIIOimport
dc.titleThick high quality GaN layers grown on 200mm Si(111) substrates by MOVPE
dc.typeOral presentation
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium F: Group III Nitrides and Their Heterostructures for Electronics and Photonics
dc.source.conferencedate9/05/2011
dc.source.conferencelocationNice France
imec.availabilityPublished - imec


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