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Study of nitrogen impact on VFB-EOT roll-off by varying interfacial SiO2 thickness

dc.contributor.authorCho, Moon Ju
dc.contributor.authorAkheyar, Amal
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorTseng, Joshua
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T12:49:12Z
dc.date.available2021-10-19T12:49:12Z
dc.date.issued2011-08
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18690
dc.sourceIIOimport
dc.titleStudy of nitrogen impact on VFB-EOT roll-off by varying interfacial SiO2 thickness
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.source.peerreviewyes
dc.source.beginpage67
dc.source.endpage71
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume62
imec.availabilityPublished - imec


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