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Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric

dc.contributor.authorCho, Moon Ju
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T12:49:22Z
dc.date.available2021-10-19T12:49:22Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18691
dc.sourceIIOimport
dc.titleAdvanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpage5
dc.source.endpage7
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume63
imec.availabilityPublished - imec


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