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Interface trap characterization of a 5.8-Å EOT p-MOSFET using high frequency on-chip ring oscillator charge pumping technique

dc.contributor.authorCho, Moon Ju
dc.contributor.authorKaczer, Ben
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T12:49:33Z
dc.date.available2021-10-19T12:49:33Z
dc.date.issued2011-10
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18692
dc.sourceIIOimport
dc.titleInterface trap characterization of a 5.8-Å EOT p-MOSFET using high frequency on-chip ring oscillator charge pumping technique
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewyes
dc.source.beginpage3342
dc.source.endpage3349
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume58
imec.availabilityPublished - imec


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