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Physical characterization of high-k HfxAl1-xOy gate dielectrics prepared by ALD

dc.contributor.authorChristiano, Verônica
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorKellermann, Guinther
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorDos Santos Filho, Sebastio G.
dc.date.accessioned2021-10-19T12:50:03Z
dc.date.available2021-10-19T12:50:03Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18695
dc.sourceIIOimport
dc.titlePhysical characterization of high-k HfxAl1-xOy gate dielectrics prepared by ALD
dc.typeProceedings paper
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.source.peerreviewyes
dc.source.beginpage393
dc.source.endpage400
dc.source.conference26th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate30/08/2011
dc.source.conferencelocationJoao Pessoa Brazil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 39, Issue 1


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