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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

dc.contributor.authorChu, L.K.
dc.contributor.authorMerckling, Clement
dc.contributor.authorAlian, AliReza
dc.contributor.authorDekoster, Johan
dc.contributor.authorKwo, J.
dc.contributor.authorHong, M.
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-19T12:50:14Z
dc.date.available2021-10-19T12:50:14Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18696
dc.sourceIIOimport
dc.titleLow interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage42908
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume99
imec.availabilityPublished - imec


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