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Investigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping

dc.contributor.authorChung, Eun-Ae
dc.contributor.authorNam, Kab-Jin
dc.contributor.authorKim, Young-Pil
dc.contributor.authorMin, Ji-Young
dc.contributor.authorCho, Moon Ju
dc.contributor.authorHong, Hyungseok
dc.contributor.authorHan, Jeong
dc.contributor.authorLee, Jae-Duk
dc.contributor.authorShin, Yu-Gyun
dc.contributor.authorChoi, Siyoung
dc.contributor.authorKim, Sangsig
dc.date.accessioned2021-10-19T12:50:23Z
dc.date.available2021-10-19T12:50:23Z
dc.date.issued2011
dc.identifier.issn1293-2558
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18697
dc.sourceIIOimport
dc.titleInvestigation of spatial and energetic trap distributions in 1 nm EOT SiO2/HfO2 by discharging-sweep mode amplitude charge pumping
dc.typeJournal article
dc.source.peerreviewyes
dc.source.beginpage1360
dc.source.endpage1363
dc.source.journalSolid State Sciences
dc.source.issue6
dc.source.volume13
imec.availabilityPublished - imec


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