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A high resolution method for measuring hot carrier degradation in matched transistor pairs

dc.contributor.authorDreesen, R.
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorDe Schepper, Luc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-09-30T08:14:59Z
dc.date.available2021-09-30T08:14:59Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1872
dc.sourceIIOimport
dc.titleA high resolution method for measuring hot carrier degradation in matched transistor pairs
dc.typeProceedings paper
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1533
dc.source.endpage1536
dc.source.conferenceProceedings of 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 97; October 1997.
dc.source.conferencelocation
imec.availabilityPublished - open access


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