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Influence of proton irradiaton in bulk and DTMOS triple gate FinFETs

dc.contributor.authorde Andrade, M.G.C.
dc.contributor.authorMartino, J.A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T13:02:32Z
dc.date.available2021-10-19T13:02:32Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18772
dc.sourceIIOimport
dc.titleInfluence of proton irradiaton in bulk and DTMOS triple gate FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage247
dc.source.endpage254
dc.source.conference26th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate30/08/2011
dc.source.conferencelocationJoao Pessoa Brazil
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 39, Issue 1


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