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New intermediate defect configuration in Si studie by in situ HREM irradiation

dc.contributor.authorFedina, L.
dc.contributor.authorGutakovskii, A.
dc.contributor.authorAseev, A.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-30T08:16:26Z
dc.date.available2021-09-30T08:16:26Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1880
dc.sourceIIOimport
dc.titleNew intermediate defect configuration in Si studie by in situ HREM irradiation
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage43
dc.source.endpage6
dc.source.conferenceMicroscopy of Semiconducting Materials 1997
dc.source.conferencedate7/04/1997
dc.source.conferencelocationOxford UK
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 157


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