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Preparation and residual stress characterisation of polycrystalline silicon germanium films grown by atmospheric pressure chemical vapour deposition

dc.contributor.authorFiorini, Paolo
dc.contributor.authorSedky, Sherif
dc.contributor.authorCaymax, Matty
dc.contributor.authorBaert, Kris
dc.date.accessioned2021-09-30T08:17:11Z
dc.date.available2021-09-30T08:17:11Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1884
dc.sourceIIOimport
dc.titlePreparation and residual stress characterisation of polycrystalline silicon germanium films grown by atmospheric pressure chemical vapour deposition
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage227
dc.source.endpage31
dc.source.conferencePolycrystalline Thin Films - Structure, Texture, Properties, and Applications III
dc.source.conferencedate31/03/1997
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 472


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