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Self-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth

dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorVincent, Benjamin
dc.contributor.authorWaldron, Niamh
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-19T13:32:19Z
dc.date.available2021-10-19T13:32:19Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18910
dc.sourceIIOimport
dc.titleSelf-aligned ohmic contact scheme to InGaAs using epitaxial Ge growth
dc.typeProceedings paper
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference23rd International Conference on Indium Phosphide and Related Materials
dc.source.conferencedate22/05/2011
dc.source.conferencelocationBerlin Germany
imec.availabilityPublished - imec


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