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Trap density in Ge-on-Si pMOSFETs with Si intermediate layers

dc.contributor.authorFobelets, Kristel
dc.contributor.authorRumyantsev, Sergey
dc.contributor.authorShur, Michael
dc.contributor.authorVincent, Benjamin
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-19T13:34:17Z
dc.date.available2021-10-19T13:34:17Z
dc.date.issued2011-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18918
dc.sourceIIOimport
dc.titleTrap density in Ge-on-Si pMOSFETs with Si intermediate layers
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.source.peerreviewno
dc.source.beginpage317
dc.source.endpage320
dc.source.conference21st International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate12/06/2011
dc.source.conferencelocationToronto Canada
imec.availabilityPublished - imec


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