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Study of oxygen related recombination defects in Si by temperature-dependent lifetime and EBIC measurements

dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorSeifert, W.
dc.date.accessioned2021-09-30T08:18:28Z
dc.date.available2021-09-30T08:18:28Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1891
dc.sourceIIOimport
dc.titleStudy of oxygen related recombination defects in Si by temperature-dependent lifetime and EBIC measurements
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage155
dc.source.endpage160
dc.source.conferenceProceedings of the 7th International Autumn Meeting : Gettering and Defect Engineering in Semiconductor Technology - GADEST '97
dc.source.conferencedate5/10/1997
dc.source.conferencelocationSpa Belgium
imec.availabilityPublished - open access
imec.internalnotesSolid State Phenomena. Vols. 57-58


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