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Comparison of charge pumping and 1/f noise in irradiated Ge pMOSFETs

dc.contributor.authorFrancis, S.A.
dc.contributor.authorZhang, Cher Xuan
dc.contributor.authorZhang, En Xia
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorGolloway, Kenneth F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T13:35:32Z
dc.date.available2021-10-19T13:35:32Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18923
dc.sourceIIOimport
dc.titleComparison of charge pumping and 1/f noise in irradiated Ge pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewno
dc.source.beginpage24
dc.source.endpage27
dc.source.conferenceEuropean Conference on Radiation Effects on Component and Systems - RADECS
dc.source.conferencedate19/09/2011
dc.source.conferencelocationSevilla Spain
imec.availabilityPublished - imec


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