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Impact of body bias on nanoscaled MOSFETs with individual trapped gate oxide charges

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorRoussel, Philippe
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorEneman, Geert
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T13:36:58Z
dc.date.available2021-10-19T13:36:58Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18928
dc.sourceIIOimport
dc.titleImpact of body bias on nanoscaled MOSFETs with individual trapped gate oxide charges
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewyes
dc.source.conferenceIEEE Semiconductor Interface Specialist Conference - SISC
dc.source.conferencedate1/12/2011
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - imec


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