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Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

dc.contributor.authorFrigeri, C.
dc.contributor.authorSerenyi, M.
dc.contributor.authorNguyen, Q.K.
dc.contributor.authorCsik, A.
dc.contributor.authorRiesz, F.
dc.contributor.authorErdelyi, Z.
dc.contributor.authorNasi, L.
dc.contributor.authorBeke, D.L.
dc.contributor.authorBoyen, Hans-Gerd
dc.date.accessioned2021-10-19T13:38:58Z
dc.date.available2021-10-19T13:38:58Z
dc.date.issued2011
dc.identifier.issn1931-7573
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18936
dc.sourceIIOimport
dc.titleRelationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers
dc.typeJournal article
dc.contributor.imecauthorBoyen, Hans-Gerd
dc.source.peerreviewyes
dc.source.beginpage189
dc.source.journalNanoscale Research Letters
dc.source.volume6
imec.availabilityPublished - imec


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