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Low temperature chemical vapor deposition of epitaxial GeSn with high substitutional Sn content

dc.contributor.authorGencarelli, Federica
dc.contributor.authorVincent, Benjamin
dc.contributor.authorDe Meulemeester, Jelle
dc.contributor.authorVantomme, Andre
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-19T13:41:03Z
dc.date.available2021-10-19T13:41:03Z
dc.date.issued2011-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18944
dc.sourceIIOimport
dc.titleLow temperature chemical vapor deposition of epitaxial GeSn with high substitutional Sn content
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference2nd GeSn workshop: GeSn Developments and Future Applications
dc.source.conferencedate2/09/2011
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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